概览

优势和特点

  • 4 A peak drive output capability
  • Output power device resistance: <1 Ω
  • Desaturation protection
    • Isolated desaturation fault reporting
    • Soft shutdown on fault
  • Miller clamp output with gate sense input
  • Isolated fault and ready functions
  • Low propagation delay: 75 ns typical
  • Minimum pulse width: 50 ns
  • Operating temperature range: −40°C to +125°C
  • Output voltage range up to 35 V
  • Input voltage range from 2.5 V to 6 V
  • Output and input UVLO
  • Creepage distance: 8 mm minimum
  • 100 kV/μs CMTI
  • 20 year lifetime for TBD V rms or TBD V dc working voltage
  • Safety and regulatory approvals (pending)
    • TBD kV ac for 1 minute per UL 1577
    • CSA Component Acceptance Notice 5A
    • DIN V VDE V 0884-11
      • VIORM = 1500 V (TBD) peak (reinforced/basic)

产品详情

The ADuM4146 is a single-channel gate driver specifically optimized for driving silicon carbide (SiC) metal-oxide semiconductor field effect transistors (MOSFETs). Analog Devices, Inc., iCoupler® technology provides isolation between the input signal and the output gate drive.

The ADuM4146 includes a Miller clamp to provide robust SiC turn off with a single-rail supply when the gate voltage drops below 2 V. Operation with unipolar or bipolar secondary supplies is possible with or without the Miller clamp operation.

The Analog Devices chip scale transformers also provide isolated communication of control information between the high voltage and low voltage domains of the chip. Information on the status of the chip can be read back from dedicated outputs. Control of resetting the device after a fault on the secondary side is performed on the primary side of the device.

Integrated onto the ADuM4146 is a desaturation detection circuit that provides protection against high voltage short-circuit SiC operation. The desaturation protection contains noise reducing features, such as a 300 ns masking time after a switching event to mask voltage spikes due to initial turn on. An internal 500 μA current source allows low device count, and the internal blanking switch allows the addition of an external current source if more noise immunity is needed.

The secondary undervoltage lockout (UVLO) is set to 11.5 V with common SiC levels taken into consideration.

APPLICATIONS

  • SiC/MOSFET/IGBT gate drivers PV inverters
  • Motor drives
  • Power supplies

产品生命周期 icon-recommended 预发布

本产品为新品,工程验证可能仍在进行中。我们正在准备量产,数量可能有限,设计规格可能会改变。

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