切り開くMEMS は、従来型のリレー方式に代わる優れた技術です。長年の研究と革新的な独自技術の成果である当社のRF MEMSスイッチは、製品市場投入までの時間を短縮し、テスト経費を削減し、パッケージの小型化と帯域幅の拡張を実現します。MEMSスイッチ技術
MEMS Switch Technology Products
This user guide describes the EVAL-ADGM1304SDZ evaluation board for the ADGM1304, a wideband, single-pole, four-throw (SP4T), microelectromechanical systems (MEMS) switch, and a control chip that are copackaged in a compact, 24-lead, 5 mm × 4 mm × 0.95 mm, lead frame chip scale package (LFCSP). The SP4T switch uses Analog Devices, Inc., MEMS switch technology and provides optimal bandwidth performance, power handling capability, and linearity for radio frequency (RF) applications. The control chip generates the high voltage signals required by the MEMS switch and allows the user to control operation through a flexible, complementary metal-oxide semiconductor (CMOS)-compliant or low voltage transistor to transistor logic (LVTTL)-compliant parallel interface, as well as via a serial peripheral interface (SPI). Multiple ADGM1304 devices can be daisy-chained together to enable the configuration of multiple devices with a minimal amount of digital lines.
For the SPI interface, the evaluation board connects to the universal serial bus (USB) port of a PC via the system demonstration platform (SDP) board. The EVAL-SDP-CB1Z board (SDP-Bcontroller board) is available for order on the Analog Devices website at www.analog.com/SDP-B.
The EVAL-ADGM1304SDZ comes fitted with connectors for RF and control signals, and links to allow the user to control the operation of the switch and evaluate the performance of the ADGM1304.
Consult the ADGM1304 data sheet in conjunction with this user guide when using this evaluation board.
The circuit shown in Figure 1 uses RF MEMS switches to route an RF signal between two surface-mount RF attenuators and two straight through paths.
Attenuating RF signals is commonly done in RF test instrumentation and receiver front ends to protect downstream circuitry and to increase dynamic range. Using discrete attenuators and switches maximizes design flexibility and routing options. In the Figure 1 circuit, two ADGM1304 single-pole, four-throw (SP4T) RF MEMS switches in a back to back configuration yield four independently switchable paths between input and output. Two of the paths are straight through transmission lines, the third path contains a 6 dB attenuator, and the forth path contains a 9 dB attenuator. Key to realizing this application is the use of ultralow insertion loss and highly linear switches to multiplex between the different path options.
The switches must be as transparent as possible to the RF signal and add as little insertion loss and distortion as possible. The ADGM1304 switches offer best in class insertion loss of 0.26 dB typical at 2.5 GHz, and a third-order intercept (IP3) performance of 69 dBm typical. In addition to insertion loss and distortion, another key benefit that the MEMS switch brings to this application is its ability to operate down to true dc. This means the switches do not limit lower frequency operation in a typical RF instrumentation attenuator switching application, and enables the instrument to pass dc bias voltages when required.
The physical size of the ADGM1304 device at 4 mm × 5 mm × 0.95 mm yields a significant reduction in printed circuit board (PCB) area compared to traditional electromechanical relays switching solutions. In addition, the actuation speed of the ADGM1304 switch is 30 μs, a significant improvement over electromechanical relays, which are in the order of milliseconds and introduce significant time lag in measurement systems. The actuation lifetime of the ADGM1304 device is guaranteed for one billion cycles, which is a major improvement over electromechanical relays and significantly increases overall system reliability.