概览

优势和特点
产品详情

优势和特点

Unique Symmetric Floating Gate Driver Architecture
High Noise Immunity,Tolerates ±10V Ground Difference between Input and Output Grounds
100V Maximum Input Voltage Independent of IC Supply Voltage V_CC
6V to 14V V_CC Operating Voltage
4V to 14V Gate Driver Voltage
0.8Ω Pull-Down, 1.5Ω Pull-Up for Fast Turn-On/Off

Adaptive Shoot-Through Protection
Programmable Dead-Time
Three-State PWM Input with Enable Pin
V_CC UVLO/OVLO and Floating Supplies UVLO
Drives Dual N-Channel MOSFETs
Open-Drain Fault Indicator
Available in Thermally Enhanced 12-LEAD MSOP
AEC-Q100 Automotive Qualification in Progress

产品详情

The LTC7060 drives N-Channel MOSFETs in a half-bridge configuration with supply voltages up to 100V. It features supply independent 3-state PWM input logic. The unique floating architecture makes the gate driver outputs robust and less sensitive to ground noise. The symmetric design allows the half bridge switching node to be inverting or non-inverting of the input logic.

With 0.8Ω pull-down and 1.5Ω pull-up capability, the strong outputs easily drive the large gate capacitances of high voltage MOSFETs with very short transition times. The adjustable turn-on and turn-off delays allow system optimization for high efficiency and reliability. Adaptive shoot-through protection prevents current resulting from MOSFET cross-conduction.

Undervoltage lockout (UVLO) circuits on both the V_CC supply and floating driver supplies turn off corresponding external MOSFETs and pull down the FLT pin when an undervoltage condition is present.

Applications