ADL8130
推荐用于新设计GaAs, pHEMT, MMIC, 0.01GHz to 8GHz, Low Noise Amplifier
- 产品模型
- 2
概述
- High gain: 25.5dB typical from 0.01GHz to 2GHz
- Low noise figure: <0.6dB typical from 0.5GHz to 2GHz
- Power-down voltage pin (VPD) for enabling and disabling the amplifier
- Single-supply bias
- Extended operating temperature range: −55°C to +125°C
- RoHS-compliant, 2mm × 2mm, 8-lead LFCSP
The ADL8130 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier (LNA) that operates from 0.01GHz to 8GHz. The ADL8130 provides a typical gain of 25.5dB from 0.01GHz to 2GHz, a 0.6dB typical noise figure from 0.5GHz to 2GHz, and a typical output third-order intercept (OIP3) of 37dBm from 0.01GHz to 2GHz, requiring only a 90mA supply current (IDQ) from a 5V supply voltage (VDD). Power dissipation can be lowered at the expense of the OIP3 and output power (POUT). The internally matched, DC-coupled RF input (RFIN) and output (RFOUT) pins require external AC coupling capacitors along with a bias inductor on RFOUT. In addition, the RF input is biased through an external inductor connected between the VBIAS pin and RFIN pin.
The ADL8130 is housed in a RoHS-compliant, 2mm × 2mm, 8-lead LFCSP.
参考资料
数据手册 1
用户手册 1
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| 产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号,脚注和 3D模型 |
|---|---|---|---|
| ADL8130ACPZN | 8-lead LFCSP 2 mm × 2 mm × 0.85 | ||
| ADL8130ACPZN-R7 | 8-lead LFCSP 2 mm × 2 mm × 0.85 |
这是最新版本的数据手册
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