Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS® SPDT in SOT-23
The ADG1219 is a monolithic iCMOS® device containing an SPDT switch. An EN input is used to enable or disable the device. When disabled, all channels are switched off. When on, each channel conducts equally well in both directions and has an input signal range that extends to the supplies. Each switch exhibits break-before-make switching action.
The iCMOS (industrial CMOS) modular manufacturing process combines high voltage complementary metal-oxide semiconductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.
The ultralow capacitance and exceptionally low charge injection of these multiplexers make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Figure 2 shows that there is minimum charge injection over the entire signal range of the device. iCMOS construction also ensures ultralow power dissipation, making the parts ideally suited for portable and battery-powered instruments.Applications
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At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
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