HMC451LP3

量产

GaAs PHEMT MMIC中等功率放大器，5 - 18 GHz

数据手册产品选型表

产品模型: 4

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产品详情

增益： 18 dB
饱和功率： +21 dBm (18% PAE)
输出IP3： +28 dBm

单电源： +5V (120 mA)
50 Ω匹配输入/输出
16引脚3x3mm QFN封装： 9 mm²

参考资料

数据手册 1

HMC451LP3: GaAs pHEMT MMIC Medium Power Amplifier, 5 - 18 GHz Data Sheet 05/05/2021

应用笔记 2

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

Thermal Management for Surface Mount Components General Application Note 11/11/2015

ADI 始终高度重视提供符合最高质量和可靠性水平的产品。我们通过将质量和可靠性检查纳入产品和工艺设计的各个范围以及制造过程来实现这一目标。出货产品的“零缺陷”始终是我们的目标。查看我们的质量和可靠性计划和认证以了解更多信息。

产品型号	引脚/封装图-中文版	文档	CAD 符号，脚注和 3D模型
HMC451LP3	16-Lead QFN (3mm x 3mm w/ EP)	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC451LP3E	16-Lead QFN (3mm x 3mm w/ EP)	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC451LP3ETR	16-Lead QFN (3mm x 3mm w/ EP)	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC451LP3TR	16-Lead QFN (3mm x 3mm w/ EP)	Material Declaration Reliablity Data	Ultra Librarian SamacSys

产品型号	产品生命周期	PCN
未找到匹配项目
3月 29, 2023 - 22_0048 Addition of ASE Korea as an Alternate Assembly Site for Select LFCSP Products
		PCN22_0048_Form Material_Report Qualification Results Summary Detailed Change Description
HMC451LP3E	量产
HMC451LP3ETR	量产

这是最新版本的数据手册

工具及仿真模型

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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