概览
优势和特点
- 2.3 A peak output current (<2 Ω RDSON_x)
- 2.5 V to 6.5 V VDD1 input
- 4.5V to 35 V VDD2 output
- UVLO at 2.3 V VDD1
- Multiple UVLO options on VDD2
- Grade A—4.4 V (typical) positive going threshold
- Grade B—7.3 V (typical) positive going threshold
- Grade C—11.3 V (typical) positive going threshold
- Precise timing characteristics
- 79 ns maximum isolator and driver propagation delay falling edge (ADuM4120)
- CMOS input logic levels
- High common-mode transient immunity: 150 kV/μs
- High junction temperature operation: 125°C
- Default low output
- Safety and regulatory approvals (pending)
- UL recognition per UL 1577
- 5 kV rms for 1 minute SOIC long package
- CSA Component Acceptance Notice 5A
- VDE certificate of conformity (pending)
- DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- VIORM = 849 V peak
- UL recognition per UL 1577
- 8 mm creepage
- Wide body, 6-lead SOIC with increased creepage
产品详情
The ADuM4120/ADuM4120-1 are 2 A isolated, single-channel drivers that employ Analog Devices, Inc., iCoupler® technology to provide precision isolation. The ADuM4120/ADuM4120-1 provide 5 kV rms isolation in the 6-lead wide body SOIC package with increased creepage. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics, such as the combination of pulse transformers and gate drivers.
The ADuM4120/ADuM4120-1 operate with input supplies ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM4120/ ADuM4120-1 offer the benefit of true, galvanic isolation between the input and the output.
Options exist for models with and without an input glitch filter. The glitch filter helps reduce the chance of noise on the input pin triggering an output.
As a result, the ADuM4120/ADuM4120-1 provide reliable control over the switching characteristics of insulated gate bipolar transistor (IGBT)/metal-oxide semiconductor field effect transistor (MOSFET) configurations over a wide range of switching voltages.
Applications
- Switching power supplies
- IGBT/MOSFET gate drivers
- Industrial inverters
- Gallium nitride (GaN)/silicon carbide (SiC) power devices
产品生命周期
量产
该产品系列中至少有一个型号已量产并可供采购。该产品适合用于新设计，但也可能有更新的替代产品。
评估套件 (1)
文档
工具及仿真模型
LTspice中提供以下器件型号：
IBIS模型
参考资料
Fundamentals of Isolated Gate Drivers
ADI iCoupler栅极驱动器——SiC和GaN挑战
控制并驱动高密度SiC/GaN功率转换
设计资源
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