Features and Benefits
- Gain: 21.5 dB typical at 30 GHz to 44 GHz
- Input return loss: 22 dB typical at 30 GHz to 44 GHz
- Output return loss: 23 dB typical at 30 GHz to 44 GHz
- OP1dB: 14 dB typical at 30 GHz to 44 GHz
- PSAT: 18 dBm typical at 30 GHz to 44 GHz
- OIP3: 21.5 dBm typical at 30 GHz to 44 GHz
- Noise figure: 3.0 dB typical at 30 GHz to 44 GHz
- 3 V supply voltage at 120 mA
- 50 Ω matched input and output
- Die size: 2.3 mm x 1.45 mm x 0.1 mm
The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) wide gold ribbon bond of 0.076 mm to 0.152 mm (3 mil to 6 mil) minimal length.
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Tools & Simulations
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