Overview

Features and Benefits

  • Gain: 12 dB typical at 10 GHz to 26 GHz
  • Input return loss: 14 dB typical at 10 GHz to 26 GHz
  • Output return loss: 16 dB typical at 10 GHz to 40 GHz
  • OP1dB: 17.5 dB typical at 10 GHz to 26 GHz
  • PSAT: 21 dBm typical at 10 GHz to 26 GHz
  • OIP3: 28.5 dBm typical at 10 GHz to 26 GHz
  • Noise figure: 3.5 dB typical at 10 GHz to 26 GHz
  • 5 V supply voltage at 85 mA
  • 50 Ω matched input and output
  • No external passive components required
  • 5.00 mm × 5.00 mm, 24-terminal LGA_CAV package

Product Details

The HMC1126ACEZ is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), low noise amplifier that operates from 400 MHz to 52 GHz. The HMC1126ACEZ provides 12 dB of typical gain, 28.5 dBm typical output third-order intercept (OIP3), 17.5 dBm typical output power at 1 dB gain compression (OP1dB), and a 3.5 dB typical noise figure at 10 GHz to 26 GHz. The HMC1126ACEZ requires 85 mA from a 5 V supply. All of the typically required external passive components for operation (ac coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small and compact printed circuit board (PCB) footprint.

The HMC1126ACEZ is housed in a 5.00 mm × 5.00 mm, 24-terminal chip array small outline no lead cavity (LGA_CAV) package.

APPLICATIONS

  • Test instrumentation
  • Military and space

    Product Lifecycle icon-recommended Recommended for New Designs

    This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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    Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.