Unlock GaN’s benefits with ADI's Half-Bridge GaN FET Gate Driver

2024-09-27

ADI’s LT8418 100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch offers robust and reliable control of GaN FETs. The smart integrated bootstrap switch generates a balanced bootstrap voltage from VCC with a minimum dropout voltage to reduce the chance of gate damage to the GaN power switch. The configuration options range from synchronous half-bridge for buck or boost operations or other full-bridge applications. The LT8418's low propagation delay and excellent delay matching make it suitable for high-frequency switching DC-DC converters, motor drivers, and class-D audio amplifiers. In addition, the LT8418 employs the WLCSP package to minimize parasitic inductance, enabling its wide use in high-performance and high-power density applications. The LT8418 also provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.

The LT8418 eases the adoption of high efficiency GaN power solutions for industrial, data center, healthcare and space applications.

Unlock GaN’s benefits with ADI's Half-Bridge GaN FET Gate Driver

2024-09-27

ADI’s LT8418 100V Half-Bridge GaN Driver with Smart Integrated Bootstrap Switch offers robust and reliable control of GaN FETs. The smart integrated bootstrap switch generates a balanced bootstrap voltage from VCC with a minimum dropout voltage to reduce the chance of gate damage to the GaN power switch. The configuration options range from synchronous half-bridge for buck or boost operations or other full-bridge applications. The LT8418's low propagation delay and excellent delay matching make it suitable for high-frequency switching DC-DC converters, motor drivers, and class-D audio amplifiers. In addition, the LT8418 employs the WLCSP package to minimize parasitic inductance, enabling its wide use in high-performance and high-power density applications. The LT8418 also provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimize EMI performance.

The LT8418 eases the adoption of high efficiency GaN power solutions for industrial, data center, healthcare and space applications.

Latest Media 12
Title
Subtitle
了解更多
添加至 myAnalog

将文章添加到 myAnalog 的资源部分、现有项目或新项目。

创建新项目