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Gallium Nitride (GaN) Technology

The higher power density of gallium nitride (GaN) means higher power in a smaller footprint, fewer components, smaller systems, and less weight—contributing to more reliable and more efficient systems.

Analog Devices’ breadth and depth of expertise in GaN device design and support combined with our deep domain knowledge makes us the ideal partner for realizing the benefits of GaN technology.

探索应用领域 GaN(氮化镓)

  • 电源中的氮化镓(GaN)解决方案 right arrow
  • 射频(RF)中的氮化镓(GaN)解决方案 right arrow
电源中的氮化镓(GaN)解决方案

电源中的氮化镓(GaN)解决方案

Simplified designs enable the control or drive of GaN power stages.

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射频(RF)中的氮化镓(GaN)解决方案

射频(RF)中的氮化镓(GaN)解决方案

克服大的尺寸、重量和功率(SWaP)需求。

image
image
电源中的氮化镓(GaN)解决方案

Simplified designs enable the control or drive of GaN power stages.

image
射频(RF)中的氮化镓(GaN)解决方案

克服大的尺寸、重量和功率(SWaP)需求。

ADI Drives GaN Innovation

GaN has emerged as a revolutionary semiconductor material with several distinct advantages over incumbent technologies in both power electronics and radio frequency (RF) applications. We are leveraging GaN to develop and enable solutions that offer higher power density, superior efficiency, and ultra-fast switching speeds. GaN’s versatility, combined with its ability to operate at high frequencies and handle high power densities, positions it as a pivotal technology driving innovation in power electronics, telecommunications, aerospace and defense, and beyond.

How ADI ensures quality and reliability of its products

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