ADRF5470

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Die on Carrier, Silicon Digital Attenuator, 2 dB LSB,5-Bit, 100 MHz to 22 GHz

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ADI公司所提供的资料均视为准确、可靠。但本公司不为用户在应用过程中侵犯任何专利权或第三方权利承担任何责任。技术指标的修改不再另行通知。本公司既没有含蓄的允许，也不允许借用ADI公司的专利或专利权的名义。本文出现的商标和注册商标所有权分别属于相应的公司。

概述

  • Wideband frequency range: 100 MHz to 22 GHz
  • Attenuation range: 46 dB with 2 dB steps
  • Low insertion loss
    • 1.5 dB typical up to 10 GHz
    • 1.9 dB typical up to 20 GHz
  • High attenuation accuracy
    • +(0.1 + 0.5% of attenuation state) typical up to 10 GHz
    • −(0.1 + 1.5% of attenuation state) typical up to 10 GHz
    • +(0.1 + 0.5% of attenuation state) typical up to 20 GHz
    • −(0.1 + 4.0% of attenuation state) typical up to 20 GHz
  • Low step error
    • ±0.2 dB typical up to 10 GHz
    • ±0.3 dB typical up to 20 GHz
  • High input linearity
    • P0.1dB: >27 dBm typical at all attenuation states
    • P1dB: >30 dBm typical at all attenuation states
    • IP3: >47 dBm typical at all attenuation states
  • High RF power handling
    • 24 dBm steady state average
    • 30 dBm steady state peak
  • Consistent return loss at all attenuation states
  • Tight distribution in relative phase
  • No low frequency spurious signals
  • Parallel mode control, CMOS/LVTTL compatible
  • RF amplitude settling time (0.1 dB of final RF output): 130 ns
  • 18-pad, 3.196 mm × 1.841 mm, die on carrier [CHIP]
ADRF5470
Die on Carrier, Silicon Digital Attenuator, 2 dB LSB,5-Bit, 100 MHz to 22 GHz
ADRF5470 Functional Block Diagram ADRF5470 Pin Configuration ADRF5470 Chip Illustration
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