ADH514S

推荐用于新设计

Aerospace, GaAs, InGaP, HBT, MMIC, 11.17 GHz to 12.02 GHz, VCO with Fo/2 and Fo/4 Frequency Output.

产品技术资料帮助

ADI公司所提供的资料均视为准确、可靠。但本公司不为用户在应用过程中侵犯任何专利权或第三方权利承担任何责任。技术指标的修改不再另行通知。本公司既没有含蓄的允许,也不允许借用ADI公司的专利或专利权的名义。本文出现的商标和注册商标所有权分别属于相应的公司。

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概述

  • Dual Output:
    • Fo = 11.17 GHz – 12.02 GHz
    • Fo/2 = 5.58 GHz – 6.01 GHz
  • Pout: + 7 dBm Typ.
  • Phase Noise: -110 dBc/Hz @ 100 kHz Typ.

The ADH514S is a GaAs, InGaP, Heterojunction Bipolar Transistor (HBT), MMIC, VCO. The ADH514S integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a +3 V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage-controlled oscillator requires no external matching components.

Applications

  • Point-to-Point/Multi-Point Radios
  • Industrial Controls
  • Satellite Communications (SATCOM)
  • Military & Space

ADH514S
Aerospace, GaAs, InGaP, HBT, MMIC, 11.17 GHz to 12.02 GHz, VCO with Fo/2 and Fo/4 Frequency Output.
HMC8618LH250 SID
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