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概览

优势和特点

  • Integrated dual-channel RF front end
    • 2-stage LNA and high power SPDT switch
    • On-chip bias and matching
    • Single supply operation
  • Gain
    • High gain mode: 32 dB typical at 3.6 GHz
    • Low gain mode: 16 dB typical at 3.6 GHz
  • Low noise figure
    • High gain mode: 1.45 dB typical at 3.6 GHz
    • Low gain mode: 1.45 dB typical at 3.6 GHz
  • High isolation
    • RXOUT-CHA and RXOUT-CHB: 47 dB typical
    • TERM-CHA and TERM-CHB: 52 dB typical
  • Low insertion loss: 0.65 dB typical at 3.6 GHz
  • High power handling at TCASE = 105°C
    • Full lifetime
      • LTE average power (9 dB PAR): 40 dBm
    • Single event (<10 sec operation)
      • LTE average power (9 dB PAR): 43 dBm
  • High OIP3: 32 dBm typical
  • Power-down mode and low gain mode for LNA
  • Low supply current
    • High gain mode: 86 mA typical at 5 V
    • Low gain mode: 36 mA typical at 5 V
    • Power-down mode: 12 mA typical at 5 V
  • Positive logic control
  • 6 mm × 6 mm, 40-lead LFCSP package

产品详情

The ADRF5545A is a dual-channel, integrated radio frequency (RF), front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.4 GHz to 4.2 GHz. The ADRF5545A is configured in dual channels with a cascading two-stage low noise amplifier (LNA) and a high power silicon single-pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.45 dB and a high gain of 32 dB at 3.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 16 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, when RF inputs are connected to a termination pin (TERM-ChA or TERM-ChB), the switch provides a low insertion loss of 0.65 dB and handles long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 40 dBm for full lifetime operation and 43 dBm for single event (<10 sec) LNA protection operation.

The device comes in an RoHS compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.

Applications

  • Wireless infrastructure
  • TDD massive multiple input and multiple output and active antenna systems
  • TDD-based communication systems

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所示报价为单片价格。所列的美国报价单仅供预算参考,指美元报价(每片美国离岸价),如有修改恕不另行通知。由于地区关税、商业税、汇率及手续费原因,国际报价可能不同。