ADRF5440
预发布Flip Chip, Silicon SP4T Switch, 1 GHz to 81 GHz
- 产品模型
- 2
概述
- Usable frequency range: 1 GHz to 81 GHz
- Low insertion loss
- 1.9 dB typical to 40 GHz
- 3.0 dB typical to 67 GHz
- 4.0 dB typical to 81 GHz
- High Isolation
- 39 dB typical up to 40 GHz
- 30 dB typical up to 67 GHz
- 20 dB typical up to 81 GHz
- High input linearity
- P0.1dB: 25 dBm typical
- IP3: 47 dBm typical
- High RF input power handling
- Through path: 24 dBm
- Hot switching: 24 dBm
- No low frequency spurs
- CMOS/LVTTL compatible
- Fast RF switching time: 25 ns
- RF settling time (50% VCTRL to 0.1 dB of final RF output): 35 ns
- Single-supply operation capability (VDD = 3.3 V , VSS = 0 V)
- 56-ball, 2.390 mm × 2.540 mm, bumped, bare die sales
The ADRF5440 is a reflective, SP4T switch manufactured in the silicon process. This switch operates from 1 GHz to 81 GHz with better than 4.0 dB of insertion loss and 20 dB of isolation. The ADRF5440 has an RF input power handling capability of 24 dBm for the through path and 24 dBm for hot switching.
The ADRF5440 draws a low current of 145 μA on the positive supply of +3.3 V and 510 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.
The ADRF5440 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance is derated. See Table 2 in the data sheet for more details.
The ADRF5440 RF ports are designed to match a characteristic impedance of 50 Ω. The ADRF5440 is 56-ball, 2.390 mm x 2.540 mm, bumped bare die sales and can operate between −40°C to +105°C.
APPLICATIONS
参考资料
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| 产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号，脚注和 3D模型 |
|---|---|---|---|
| ADRF5440BCDZ | BUMPED BARE DIE SALES | ||
| ADRF5440BCDZ-R7 | BUMPED BARE DIE SALES |
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