ADRF5162
ADRF5162
Info :
推荐新设计使用
ADRF5162
High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz
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Info :
推荐新设计使用
Info :
推荐新设计使用
产品详情
产品详情
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产品模型
2
特性
- Frequency range: 0.4 GHz to 8 GHz
- Low insertion loss: 0.6 dB typical to 4 GHz
- High Isolation: 45 dB typical to 4 GHz
- High input linearity
- 0.1 dB power compression (P0.1dB): 49 dBm
- Third order intercept (IP3): >76 dBm
- High power handling at TCASE = 85°C:
- Insertion loss path
- Average: 45.5 dBm
- Pulsed (>100 ns pulse width, 15% duty cycle): 48.5 dBm
- Peak (≤100 ns peak duration, 5% duty cycle): 50 dBm
- Hot-switching at RFC: 43 dBm
- Insertion loss path
- 0.1 dB RF settling time with PIN ≤ 43 dBm: 1.2 μs
- No low frequency spurious
- Positive control interface: CMOS/LVTTL-compatible
- 24-lead, 4.0 mm × 4.0 mm LFCSP package
更多细节
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The ADRF5162 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.
The ADRF5162 operates from 0.4 GHz to 8 GHz with typical insertion loss of 0.6 dB and typical isolation of 45 dB. The device has a radio frequency (RF) input power handling capability of 45.5 dBm average power and 50 dBm peak power for the insertion loss path.
The ADRF5162 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5162 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.
The ADRF5162 comes in a 24-lead, 4.0 mm × 4.0 mm, RoHS-compliant, lead frame chip scale package (LFCSP) package and can operate from −40°C to +105°C.
APPLICATIONS
- Military radios, radars, and electronic counter measures
- Cellular infrastructure
- Test and instrumentation
- GaN and PIN diode replacement
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ADRF5162
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更新 08/16/2024
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参考资料
参考资料
设计资源 2
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| 产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号，脚注和 3D模型 |
|---|---|---|---|
| ADRF5162BCPZN |
24-Lead LFCSP (4mm x 4mm x 0.85mm w/ EP)
|
|
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| ADRF5162BCPZN-R7 |
24-Lead LFCSP (4mm x 4mm x 0.85mm w/ EP)
|
|
- ADRF5162BCPZN
- 引脚/封装图-中文版
-
24-Lead LFCSP (4mm x 4mm x 0.85mm w/ EP)
- 文档
-
HTML
Material Declaration
-
HTML
Reliablity Data
- CAD 符号，脚注和 3D模型
-
Ultra Librarian
-
SamacSys
- ADRF5162BCPZN-R7
- 引脚/封装图-中文版
-
24-Lead LFCSP (4mm x 4mm x 0.85mm w/ EP)
- 文档
-
HTML
Material Declaration
-
HTML
Reliablity Data
- CAD 符号，脚注和 3D模型
-
Ultra Librarian
-
SamacSys
软件和型号相关生态系统
软件和型号相关生态系统
评估套件
评估套件 1
EVAL-ADRF5162
Evaluating the ADRF5162 High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz
Evaluating the ADRF5162 High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz
产品详情
The ADRF5162 is a single-pole, double-throw (SPDT) switch manufactured in the silicon process.
This user guide describes the ADRF5162-EVALZ evaluation board, designed to simply evaluate the features and performance of the ADRF5162. Figure 1 shows a photograph of the evaluation board.
The ADRF5162 data sheet provides full specifications for the ADRF5162. Refer to the ADRF5162 data sheet with this user guide when using the ADRF5162-EVALZ.
工具和仿真
工具及仿真模型 1
S-参数 1
S-参数
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