概览

优势和特点

  • Output P1dB: 31 dBm typical at 22 GHz to 36 GHz
  • PSAT: 32 dBm typical at 22 GHz to 36 GHz
  • Gain: 21.5 dB typical at 22 GHz to 36 GHz
  • Output IP3: 41 dBm typical at 22 GHz to 44 GHz
  • Supply voltage: 5 V typical at 1400 mA maximum
  • 50 Ω matched input and output
  • Die size: 3.610 mm × 3.610 mm × 0.102 mm

产品详情

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.

Applications

  • Military and space
  • Test instrumentation

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