概览

优势和特点

  • Output P1dB: 19 dBm (typical at 7 GHz to 11 GHz)
  • PSAT: 23 dBm (typical at 7 GHz to 14 GHz)
  • Gain: 13 dB (typical at 7 GHz to 11 GHz)
  • Output IP3: 31.5 dBm (typical at 7 GHz to 11 GHz)
  • Phase noise: −172 dBc/Hz at 10 kHz offset
  • VCC: 5 V at ICQ = 76 mA
  • Die size: 1.490 mm × 0.930 mm × 0.102 mm

产品详情

The ADL8150ACHIP is a self biased, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 13 dB of gain, 19 dBm output power for 1 dB gain compression (P1dB), and an output third-order intercept (IP3) of 31.5 dBm at 7 GHz to 11 GHz. The amplifier requires 76 mA of quiescent collector supply current (ICQ) from a 5 V supply voltage (VCC). The ADL8150ACHIP also features inputs and outputs (I/Os) that are internally matched to 50 Ω and facilitates integration into multichip modules (MCMs). All data is taken with the chip connected via two wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mil) long.

Applications

  • Military and space
  • Test instrumentation

产品生命周期 icon-recommended 推荐新设计使用

本产品已上市。数据手册包含所有最终性能规格和工作条件。ADI公司推荐新设计使用这些产品。

工具及仿真模型

S参数

设计资源

ADI始终把满足您最高可靠性水平的产品放在首要位置。我们通过在所有产品、工艺设计和制造过程中引入高质量和可靠性检查实践这一承诺。发运的产品实现“零缺陷”始终是我们的目标。

样片申请及购买

电脑版网站提供样片和购买功能
返回
查询库存


这里所列出的美国报价单仅供预算参考,指美元报价(规定订量的每片美元,美国离岸价),如有修改不再另行通知。由于地区关税、商业税、汇率及手续费原因,国际报价可能不同。对于特殊批量报价,请与您当地的ADI公司办事处或代理商联络。对于评估板和套件的报价是指一个单位价格。


价格表帮助