ADH659S
推荐新设计使用DC to 15 GHz Power Amplifier
- 产品模型
- 1
产品详情
- P1dB Output Power: +26.5 dBm
- Gain: 19 dB
- OIP3: +35 dBm
- Single Supply: +8V @ 300 mA
- 50 Ohm Matched Input/Output
- Die Size: 3.06 mm x 1.559 mm x 0.1 mm
- Screened in accordance with MIL-PRF-38534, Class K
The ADH659S is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm Output P1dB while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the ADH659S ideal for variety of applications. The ADH659S amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs).
Applications
- Microwave Radios
- VSAT
- Test Instrumentation
- Military and Space
参考资料
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| 产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号，脚注和 3D模型 |
|---|---|---|---|
| HMC8418 | CHIPS OR DIE |
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