ADH659S

推荐用于新设计

Aerospace, GaAs, PHEMT, MMIC, Power Amplifier, DC to 15 GHz

产品技术资料帮助

ADI公司所提供的资料均视为准确、可靠。但本公司不为用户在应用过程中侵犯任何专利权或第三方权利承担任何责任。技术指标的修改不再另行通知。本公司既没有含蓄的允许,也不允许借用ADI公司的专利或专利权的名义。本文出现的商标和注册商标所有权分别属于相应的公司。

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概述

  • P1dB Output Power: +26.5 dBm
  • Gain: 19 dB
  • OIP3: +35 dBm
  • Single Supply: +8V @ 300 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.06 mm x 1.559 mm x 0.1 mm
  • Screened in accordance with MIL-PRF-38534, Class K

The ADH659S is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm Output P1dB while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the ADH659S ideal for variety of applications. The ADH659S amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs).

Applications

  • Microwave Radios
  • VSAT
  • Test Instrumentation
  • Military and Space

ADH659S
Aerospace, GaAs, PHEMT, MMIC, Power Amplifier, DC to 15 GHz
HMC8418 SID
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