1. Products
  2. Power Management
  3. Switching Regulators
  4. Step-Down (Buck) Regulators
  5. External Power Switch Buck Controllers
  6. LTC7891


Features and Benefits

  • GaN drive technology fully optimized for GaN FETs
  • Wide VIN range: 4 V to 100 V
  • Wide output voltage range: 0.8 V ≤ VOUT ≤ 60 V
  • No catch, clamp, or bootstrap diodes needed
  • Internal smart bootstrap switches prevent overcharging of high-side driver supplies
  • Internally optimized, smart near zero dead times or resistor adjustable dead times
  • Split output gate drivers for adjustable turn on and turn off driver strengths
  • Accurate adjustable driver voltage and UVLO
  • Low operating IQ: 5 μA (48 VIN to 5 VOUT)
  • Programmable frequency (100 kHz to 3 MHz)
  • Phase lockable frequency (100 kHz to 3 MHz)
  • Spread spectrum frequency modulation
  • 28-lead (4 mm × 5 mm) side wettable QFN package

Product Details

The LTC7891 is a high performance, step-down, dc-to-dc switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field effect transistor (FET) power stages from input voltages up to 100 V. The LTC7891 solves many of the challenges traditionally faced when using GaN FETs. The LTC7891 simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide semiconductor field effect transistor (MOSFET) solution.

The internal smart bootstrap switch prevents overcharging of the BOOST pin to SW pin high-side driver supplies during dead times, protecting the gate of the top GaN FET. The LTC7891 internally optimizes the gate driver timing on both switching edges to achieve smart near zero dead times, significantly improving efficiency and allowing for high frequency operation, even at high input voltages. Alternatively, the user can adjust the dead times with external resistors for margin or to tailor the application.

The gate drive voltage of the LTC7891 can be precisely adjusted from 4 V to 5.5 V to optimize performance, and to allow the use of different GaN FETs, or even logic level MOSFETs.

Note that throughout this data sheet, multifunction pins, such as PLLIN/SPREAD, are referred to either by the entire pin name or by a single function of the pin, for example, PLLIN, when only that function is relevant.


  • Industrial power systems
  • Military avionics and medical systems
  • Telecommunications power systems

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

Evaluation Kits (1)

Tools & Simulations


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Design Resources

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well.  "Zero defects" for shipped products is always our goal.View our quality and reliability program and certifications for more information.

Part Number Material Declaration Reliability Data Pin/Package Drawing CAD Symbols, Footprints & 3D Models
LTC7891RUFDM#PBF Material Declaration Reliability Data 28-Lead QFN (4mm x 5mm, Plastic Side Wettable)
LTC7891RUFDM#TRPBF Material Declaration Reliability Data 28-Lead QFN (4mm x 5mm, Plastic Side Wettable)
Wafer Fabrication Data

Sample & Buy

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.