Overview
Features and Benefits
- Low noise figure: 1.7 dB typical
- Single positive supply (self biased)
- High gain: 15.5 dB typical
- High OIP3: 34 dBm typical
- 6-lead, 2 mm × 2 mm LFCSP
HMC8411TCPZ-EP Supports defense and aerospace applications (AQEC standard)
- Download the HMC8411TCPZ-EP data sheet (pdf)
- Military temperature range (−55°C to +125°C)
- Controlled manufacturing baseline
- 1 assembly/test site
- 1 fabrication site
- Product change notification
- Qualification data available on request
- V62/19617 DSCC Drawing Number
Product Details
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.
The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.
The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.
The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.
Multifunction pin names may be referenced by their relevant function only.
Applications
- Test instrumentation
- Military communications
Product Categories
Markets and Technologies
Product Lifecycle
Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Evaluation Kits (3)
Documentation & Resources
Tools & Simulations
Sys-Parameter
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
S-Parameter
ZIP
HMC8411LP2FE S-Parameters
19.54 K
Design Resources
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.View our quality and reliability program and certifications for more information.
| Part Number | Material Declaration | Reliability Data | Pin/Package Drawing | CAD Symbols, Footprints & 3D Models |
|---|---|---|---|---|
| HMC8411LP2FE | Material Declaration | Reliability Data | 6-Lead LFCSP (2mm x 2mm) | |
| HMC8411LP2FETR | Material Declaration | Reliability Data | 6-Lead LFCSP (2mm x 2mm) | |
| HMC8411TCPZ-EP-PT | Material Declaration | Reliability Data | 6-Lead LFCSP (2mm x 2mm) | |
| HMC8411TCPZ-EP-R7 | Material Declaration | Reliability Data | 6-Lead LFCSP (2mm x 2mm) | |
| Wafer Fabrication Data |
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Sample & Buy
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Evaluation Boards
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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.