HMC-ALH313 Data Sheet3/22/2019
Features and Benefits
- Noise Figure: 3.0 dB
- Gain: 20 dB
- P1dB Output Power: +12 dBm
- Supply Voltage: +2.5V @ 52 mA
- Die Size: 1.80 x 0.73 x 0.1 mm
The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 27 and 33 GHz. The amplifier provides 20 dB of gain, a 3 dB noise figure and +12 dBm of output power at 1 dB gain compression while requiring only 52 mA from a +2.5V supply voltage. This amplifier die is ideal for use as a LNA or driver amplifier, and may be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm²) .
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Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
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|Part Number||Material Declaration||Reliability Data||Pin/Package Drawing||CAD Symbols, Footprints & 3D Models|
|HMC-ALH313||Material Declaration||Reliability Data||CHIPS OR DIE|
|HMC-ALH313-SX||Material Declaration||Reliability Data||CHIPS OR DIE|
|Wafer Fabrication Data|
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