Overview

Features and Benefits

  • Single positive supply (self biased)
  • High OIP2: 52 dBm typical at 0.6 GHz to 7.5 GHz
  • High gain: 15 dB typical at 0.6 GHz to 6 GHz
  • High OIP3: 32 dBm typical
  • Low noise figure: 3.5 dB typical at 0.4 GHz to 6 GHz
  • RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP

Product Details

The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.

The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to 6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a 20 dBm typical output power for 1 dB compression (OP1dB) at 0.6 GHz to 6 GHz, and a typical output third-order intercept (OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA from a 5 V drain supply voltage. The low noise amplifier has a high output second-order intercept (OIP2) of 52 dBm typical at 0.6 GHz to 6 GHz, making the ADL8104 suitable for military and test instrumentation applications.

The ADL8104 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled and the bias inductor is also integrated, making the ADL8104 ideal for surface-mounted technology (SMT)-based, high density applications.

The ADL8104 is housed in an RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP.

APPLICATIONS

  • Test instrumentation
  • Military communications

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

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Pricing displayed is based on 1-piece. The USA list pricing shown is for budgetary use only, shown in United States dollars (FOB USA per unit), and is subject to change. International prices may vary due to local duties, taxes, fees and exchange rates.