HMC462-Die

PRODUCTION

Low Noise Amplifier Chip, 2 - 20 GHz

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Overview

  • Noise Figure: 2 dB @ 10 GHz
  • Gain: 15 dB
  • P1dB Output Power: +15 dBm @ 10 GHz
  • Self-Biased: +5V @ 63 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.12 x 1.38 x 0.1 mm

The HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications.

The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).

Applications

  • Telecom Infrastructure 
  • Microwave Radio & VSAT 
  • Military & Space 
  • Test Instrumentation 
  • Fiber Optics

HMC462-Die
Low Noise Amplifier Chip, 2 - 20 GHz
HMC462_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

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