HMC372

NOT RECOMMENDED FOR NEW DESIGNS

GaAs pHEMT MMIC Low Noise Amplifier, 700 - 1000 MHz

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Overview

Noise Figure: < 1 dB
Output IP3: +34 dBm
Gain: 15 dB

Very Stable Gain vs. Supply & Temperature
Single Supply: +5V @ 100 mA
50 Ohm Matched Output

The HMC372LP3 & HMC372LP3E are GaAs pHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 1 dB noise figure, 15 dB gain and +34 dBm output IP3 from a single supply of +5V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC617LP3(E).

Applications

GSM, GPRS & EDGE
CDMA & W-CDMA
Private Land Mobile Radio

Documentation

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Hardware Ecosystem

Parts	Product Life Cycle	Description
HMC1022A-Die		GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 48 GHz

Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC372 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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