HMC1022A-Die

GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 48 GHz

Part Models: 2
1ku List Price: price unavailable

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Overview

P1dB: 25 dBm (typical) at dc to 30 GHz frequency range
P_SAT: 26 dBm (typical) at dc to 30 GHz frequency range
Gain: 11.5 dB (typical)
Output IP3: 33 dBm (typical) at dc to 30 GHz frequency range

Supply voltage: 10 V at 150 mA
50 Ω matched I/O
Die size: 2.89 mm × 1.48 mm × 0.1 mm

The HMC1022ACHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 48 GHz. The amplifier provides 11.5 dB of small signal gain, 0.25 W (25 dBm) output power at 1 dB gain compression (P1dB), and a typical output third-order intercept (IP3) of 33 dBm, while requiring 150 mA from a 10 V supply on the V_DD pin. Gain flatness is excellent from dc to 48 GHz at ±0.5 dB typical, making the HMC1022ACHIPS ideal for military, space, and test equipment applications. The HMC1022ACHIPS also features inputs/outputs (I/Os) that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via 0.075 mm × 0.025 mm (3 mil × 1 mil) ribbon bonds with a minimal length of 0.31 mm (12 mils).

Applications

Military and space
Test instrumentation

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC1022ACHIPS: GaAs pHEMT MMIC 0.25 Watt Power Amplifier, DC - 48 GHz Data Sheet (Rev.0) 02/20/2019

Application Note 3

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-2061: Wideband Bias Tee Design Using 0402, SMD Components 11/30/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC1022A-SX	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC1022ACHIPS	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC1022A-Die S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.