ADPA9007-2

推荐用于新设计

DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier

数据手册 (Rev. 0) 产品选型表
产品技术资料帮助

ADI公司所提供的资料均视为准确、可靠。但本公司不为用户在应用过程中侵犯任何专利权或第三方权利承担任何责任。技术指标的修改不再另行通知。本公司既没有含蓄的允许，也不允许借用ADI公司的专利或专利权的名义。本文出现的商标和注册商标所有权分别属于相应的公司。
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概述

  • Wideband, internally matched, RF power amplifier
  • DC-coupled input and output
  • Integrated RF power detector
  • Integrated temperature sensor
  • Gain: 13 dB typical at 8 GHz to 16 GHz
  • OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
  • PSAT: 33.5 dBm typical at 8 GHz to 16 GHz
  • OIP3: 43.5 dBm typical at 8 GHz to 16 GHz

The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.

The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (VDD) of 15 V and has a 500 mA typical quiescent drain current (IDQ), which is adjustable.

The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.

APPLICATIONS

  • Electronic warfare
  • Radar
  • Test and measurement equipment
ADPA9007-2
DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
ADPA9007 2CHIP Functional Block Diagram ADPA9007-2 CHIP Pin Configuration
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数据手册 1

应用笔记 1

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