ADH1126S

推荐用于新设计

Aerospace, GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz – 50 GHz

产品模型: 1

Viewing:

概述

Output Power for 1 dB Compression (OP1dB): 17.5 dB Typ.
Saturated Output Power (P_SAT): 21 dBm Typ.
Gain: 11 dB Typ.
Output Third-Order Intercept (OIP3): +28 dBm Typ.

Supply Voltage: +5 V @ 65 mA
50 Ω matched Input/Output.
Die Size: 2.3 mm X 1.45 mm X 0.05 mm
Screened in accordance with MIL-PRF-38534, Class K

The ADH1126S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The ADH1126S provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.

The ADH1126S amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).

Applications