- High P1dB Output Power: +32.5 dBm
- High Psat Output Power: +33.5 dBm
- High Gain: 14.5 dB
- High Output IP3: 43 dBm
- Supply Voltage: +15 V @ 500 mA
- 50 Ohm Matched Input/Output
- Die Size: 2.98 x 1.78 x 0.1 mm
The HMC998A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm output IP3 and +32.5 dBm of output power at 1 dB gain compression while requiring 500 mA quiescent current from a +15 V supply. The HMC998A exhibits a slightly positive gain slope, making it ideal for EW, ECM, Radar and test equipment applications. The HMC998A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.