- High P1dB Output Power: +29 dBm
- High Psat Output Power: +31 dBm
- High Gain: 15 dB
- High Output IP3: 41 dBm
- Supply Voltage: +10 V @ 400 mA
- 50 Ohm Matched Input/Output
- Die Size: 2.89 × 1.55 × 0.1 mm
TThe HMC797A is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 23% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797A is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
- Test Instrumentation
- Military & Space
- Fiber Optics
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.