Features and Benefits
- Temperature Compensated Internal Schottky Diode RF Detector
- Wide Input Frequency Range: 300MHz to 3GHz
- Wide Input Power Range: –30dBm to 6dBm
- Buffered Detector Output
- Wide VCC Range of 2.7V to 6V
- Low Operating Current: 600µA
- Low Shutdown Current: <2µA
- SC70 Package
The LTC5509 is an RF power detector for RF applications operating in the 300MHz to 3GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small SC70 package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH.
The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin without gain compression. Consequently, the output voltage is linearly proportional to the RF input voltage. A power saving shutdown mode reduces supply current to less than 2µA.
The LTC5509 operates with input power levels from –30dBm to 6dBm.
- Multimode Mobile Phone Products
- Optical Data Links
- Wireless Data Modems
- Wireless and Cable Infrastructure
- RF Power Alarm
- Envelope Detector
Product Lifecycle Production
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
Evaluation Kits (1)
The DC539B demo board is used to evaluate the LTC5509, RF power detector with integrated output buffer and voltage reference. The LTC5509 converts an RF input signal at pin 6 (RF) to a DC voltage at pin 3 (VOUT). The RF input frequency range is 300 MHz to 3000 MHz. Maximum input power is 8 dBm. The output voltage at VOUT will start at an initial DC value of typically 250mV. When the RF signal is applied the output voltage will increase.