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Features
- High P1dB Output Power: +32.5 dBm
- High Psat Output Power: +33.5 dBm
- High Gain: 14.5 dB
- High Output IP3: 43 dBm
- Supply Voltage: +15 V @ 500 mA
- 50 Ohm Matched Input/Output
- Die Size: 2.98 x 1.78 x 0.1 mm
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The HMC998A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm output IP3 and +32.5 dBm of output power at 1 dB gain compression while requiring 500 mA quiescent current from a +15 V supply. The HMC998A exhibits a slightly positive gain slope, making it ideal for EW, ECM, Radar and test equipment applications. The HMC998A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
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HMC998A-DIE
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC998A | CHIPS OR DIE |
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| HMC998A-SX | CHIPS OR DIE |
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