Features and Benefits
- High P1dB Output Power: +32.5 dBm
- High Psat Output Power: +33.5 dBm
- High Gain: 14.5 dB
- High Output IP3: 43 dBm
- Supply Voltage: +15 V @ 500 mA
- 50 Ohm Matched Input/Output
- Die Size: 2.98 x 1.78 x 0.1 mm
The HMC998A is a GaAs MMIC pHEMT Distributed Power Amplifier die which operates between DC and 22 GHz. The amplifier provides 14.5 dB of gain, 43 dBm output IP3 and +32.5 dBm of output power at 1 dB gain compression while requiring 500 mA quiescent current from a +15 V supply. The HMC998A exhibits a slightly positive gain slope, making it ideal for EW, ECM, Radar and test equipment applications. The HMC998A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
Product Lifecycle Production
At least one model within this product family is in production and available for purchase. The product is appropriate for new designs but newer alternatives may exist.
Tools & Simulations
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal.
Sample & Buy
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