HMC930-DIE

Obsolete

0.25 Watt Power Amplifier Chip, DC - 40 GHz

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Overview

  • High P1dB Output Power: 22 dBm
  • High Psat Output Power: 24 dBm
  • High Gain: 13 dB
  • High Output IP3: +33.5 dBm
  • Supply Voltage: +10 V @ 175 mA
  • 50 Ohm matched Input/Output 
  • Die Size: 2.82 x 1.50 x 0.1 mm

The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

  • Test Instrumentation
  • Microwave Radio & VSAT
  • Military & Space
  • Telecom Infrastructure
  • Fiber Optics

Suggested Replacement Parts

HMC930AG

HMC930-DIE
0.25 Watt Power Amplifier Chip, DC - 40 GHz
hmc930_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC930A-DIE GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz
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Tools & Simulations

S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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