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Features
- High output power for 1 dB compression (P1dB): 22 dBm
- High saturated output power (PSAT): 24 dBm
- High gain: 13 dB
- High output third-order intercept (IP3): 33.5 dBm
- Supply voltage: 10 V at 175 mA
- 50 Ω matched input/output
- Die size: 2.82 mm × 1.50 mm × 0.1 mm
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The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).
Applications
- Test instrumentation
- Microwave radios and VSATs
- Military and space
- Telecommunications infrastructure
- Fiber optics
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HMC930A-DIE
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC930A | CHIPS OR DIE |
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| HMC930A-SX | CHIPS OR DIE |
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- HMC930A
- Pin/Package Drawing
- CHIPS OR DIE
- Documentation
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Reliablity Data
- CAD Symbols, Footprints, and 3D Models
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- Pin/Package Drawing
- CHIPS OR DIE
- Documentation
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Material Declaration
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HTML
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Ultra Librarian
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SamacSys
Software & Part Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
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RECOMMENDED FOR NEW DESIGNS |
GaAs pHEMT MMIC 0.25 Watt Power Amplifier, DC - 40 GHz |
Tools & Simulations 3
S-Parameter 1
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Sys-Parameter
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