HMC930A-DIE

PRODUCTION

GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz

Data Sheet (Rev. 0) Product Selection Table

Part Models: 2
1ku List Price: price unavailable

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Overview

High output power for 1 dB compression (P1dB): 22 dBm
High saturated output power (PSAT): 24 dBm
High gain: 13 dB
High output third-order intercept (IP3): 33.5 dBm
Supply voltage: 10 V at 175 mA
50 Ω matched input/output
Die size: 2.82 mm × 1.50 mm × 0.1 mm

The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).

Applications

Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC930A: GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz Die Data Sheet (Rev.0) 12/10/2015

Application Note 4

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-2061: Wideband Bias Tee Design Using 0402, SMD Components 11/30/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC930A	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC930A-SX	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Hardware Ecosystem

Parts	Product Life Cycle	Description
HMC5805A	RECOMMENDED FOR NEW DESIGNS	GaAs pHEMT MMIC 0.25 Watt Power Amplifier, DC - 40 GHz

Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

Open Tool

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.