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Features
- Noise figure: 1.6 dB typical
- Small signal gain: 19 dB typical
- Output P1dB: 16 dBm typical
- Single-supply voltage: 3.5 V at 90 mA typical
- Output IP3: 27 dBm typical
- 50 Ω matched input/output
- Self biased with optional bias control for quiescent drain control (IDQ) reduction with no radio frequency (RF) applied
- Die size: 1.33 mm × 1.08 mm × 0.102 mm
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The HMC903 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self biased with the optional bias control for IDQ reduction. It operates between 6 GHz and 18 GHz. This LNA provides 19 dB of small signal gain, 1.6 dB noise figure, and an output third-order intercept (IP3) of 27 dBm, requiring only 90 mA of supply current from a 3.5 V supply. The output power for a 1 dB compression (P1dB) of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc blocked and internally matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mil) length.
Applications
- Point to point radios
- Point to multipoint radios
- Military and space
- Test instrumentation
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HMC903-Die
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
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| HMC903 | CHIPS OR DIE |
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| HMC903-SX | CHIPS OR DIE |
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- HMC903
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- CHIPS OR DIE
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Software & Part Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
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RECOMMENDED FOR NEW DESIGNS |
GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz |
Tools & Simulations 3
S-Parameter 1
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