HMC903-Die

PRODUCTION

6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier

Data Sheet (Rev. C) Product Selection Table

Part Models: 2
1ku List Price: price unavailable

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Overview

Noise figure: 1.6 dB typical
Small signal gain: 19 dB typical
Output P1dB: 16 dBm typical
Single-supply voltage: 3.5 V at 90 mA typical
Output IP3: 27 dBm typical
50 Ω matched input/output
Self biased with optional bias control for quiescent drain control (I_DQ) reduction with no radio frequency (RF) applied
Die size: 1.33 mm × 1.08 mm × 0.102 mm

The HMC903 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self biased with the optional bias control for I_DQ reduction. It operates between 6 GHz and 18 GHz. This LNA provides 19 dB of small signal gain, 1.6 dB noise figure, and an output third-order intercept (IP3) of 27 dBm, requiring only 90 mA of supply current from a 3.5 V supply. The output power for a 1 dB compression (P1dB) of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc blocked and internally matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mil) length.

Applications

Point to point radios
Point to multipoint radios
Military and space
Test instrumentation

There is a newer version of this part available

GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz

Part Models: 2
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC903: 6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier Data Sheet (Rev.C) 10/20/2015

Application Note 5

Thermal Management for Surface Mount Components General Application Note 11/11/2015

AN-2591: When It Comes to Long-Term Reliability of RF Amplifier ICs, Focus First on Die Junction Temperature 08/05/2024

AN-2622: Selecting an Analog Devices RF Low Noise Amplifier 09/04/2025

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC903	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys
HMC903-SX	CHIPS OR DIE	Material Declaration Reliablity Data Package Resources	Ultra Librarian SamacSys

This is the most up-to-date revision of the Data Sheet.

Software Resources

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Hardware Ecosystem

Parts	Product Life Cycle	Description
ADL8107	RECOMMENDED FOR NEW DESIGNS	GaAs, pHEMT, MMIC, Low Noise Amplifier, 6 GHz to 18 GHz

Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

HMC903 Die S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.