Part Models 2
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Features
  • High small signal gain: 16.0 dB
  • High PAE: 55% typical
  • Instantaneous bandwidth: 0.01 GHz to 2.8 GHz
  • Supply voltage: VDD = 28 V at 100 mA
  • Internal prematching
    • Simple and compact external tuning for optimal performance
  • 32-lead, 5 mm × 5 mm, LFCSP package
Additional Details
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The HMC8500LP5DE is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, and with a ±1.0 dB typical gain flatness.

The HMC8500LP5DE is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

The HMC8500LP5DE amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.

Applications

  • Extended battery operation for public mobile radios
  • Power amplifier stage for wireless infrastructures
  • Test and measurement equipment
  • Commercial and military radars
  • General-purpose transmitter amplification
Part Models 2
1ku List Price
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Documentation

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Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC8500LP5DE
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HMC8500LP5DETR
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Product Lifecycle

PCN

Oct 30, 2018

- 18_0034

Discontinuance of Model Numbers: HMC1132LP5DE, HMC943ALP5DE, HMC1114LP5DE, HMC8500LP5DE and HMC1099LP5DE

HMC8500LP5DE

Obsolete

HMC8500LP5DETR

Obsolete

Filter by Model

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Part Models

Product Lifecycle

PCN

Oct 30, 2018

- 18_0034

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Discontinuance of Model Numbers: HMC1132LP5DE, HMC943ALP5DE, HMC1114LP5DE, HMC8500LP5DE and HMC1099LP5DE

HMC8500LP5DE

Obsolete

HMC8500LP5DETR

Obsolete

Software & Part Ecosystem

Evaluation Kits 2

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Detail

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

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EVAL-HMC8500

LAST TIME BUY. See EVAL-HMC8500PM5E.

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EVAL-HMC8500

LAST TIME BUY. See EVAL-HMC8500PM5E.

LAST TIME BUY. See EVAL-HMC8500PM5E.

Product Detail

The HMC8500 evaluation board is a 2-layer board fabricated using Rogers 4350 and using best practices for high frequency RF design. The RF input and RF output traces have a 50 Ω characteristic impedance. The board is attached to a heatsink using an electrically and thermally conductive epoxy providing a low thermal and low dc resistance path. Components are mounted using SN63 solder allowing rework of the surface mount components without compromising the circuit board to heatsink attachment.

The evaluation board and populated components are designed to operate over the ambient temperature range of −40°C to +85°C. During operation, attach the evaluation board to a temperature controlled plate to control the temperature of the HMC8500 during operation. For the proper bias sequence, see the Applications Information section of the data sheet.

Tools & Simulations 2

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