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Features
- High small signal gain: 15.0 dB typical
- POUT: 40 dBm typical at PIN = 30 dBm
- High PAE: 55% typical at PIN = 30 dBm
- Frequency range: 0.01 GHz to 2.8 GHz across all frequencies
- VDD = 28 V at quiescent current of 100 mA
- Internal prematching
Simple and compact external tuning for optimal performance - 5 mm × 5 mm, 32-lead LFCSP package
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The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.
The HMC8500PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.
The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.
Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevant
APPLICATIONS
- Extended battery operation for public mobile radios
- Power amplifier stage for wireless infrastructures
- Test and measurement equipment
- Commercial and military radars
- General-purpose transmitter amplification
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HMC8500PM5E
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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC8500PM5E |
32-Lead LFCSP (5mm x 5mm w/ EP)
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| HMC8500PM5ETR |
32-Lead LFCSP (5mm x 5mm w/ EP)
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32-Lead LFCSP (5mm x 5mm w/ EP)
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32-Lead LFCSP (5mm x 5mm w/ EP)
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Material Declaration
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Product Lifecycle
PCN
Mar 19, 2021
- 20_0308
Epoxy Change at ASE Chungli Branch for PM5E and ACGZN Packages
HMC8500PM5E
PRODUCTION
HMC8500PM5ETR
PRODUCTION
Filter by Model
Part Models
Product Lifecycle
PCN
Mar 19, 2021
- 20_0308
Epoxy Change at ASE Chungli Branch for PM5E and ACGZN Packages
HMC8500PM5E
PRODUCTION
HMC8500PM5ETR
PRODUCTION
Software & Part Ecosystem
Evaluation Kits 2
EVAL-HMC8500PM5E
HMC8500PM5E Evaluation Board
Product Detail
The HMC8500PM5E evaluation board is a 2-layer board fabricated using Rogers 4350 and using best practices for high frequency RF design. The RF input and RF output traces have a 50 Ω characteristic impedance. The board is attached to a heat sink using an electrically and thermally conductive epoxy providing a low thermal and low dc resistance path. Components are mounted using SN63 solder allowing rework of the surface-mount components without compromising the circuit board to heat sink attachment.
The evaluation board and populated components are designed to operate over the ambient temperature range of −40°C to +85°C. During operation, attach the evaluation board to a temperature controlled plate to control the temperature of the HMC8500PM5E during operation. For the proper bias sequence, see the Applications Information section within the data sheet.
A fully populated and tested evaluation board is available from Analog Devices, Inc., upon request.
Resources
ADPULSERPLUSEBZ
Pulser Plus Reference Design for GaN PA Biasing and Sequencing
Features and Benefits
- Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
- Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
- Operation in Drain Pulsed Mode or Gate Pulsed Mode
- Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
- Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
- Drain Current Monitoring Circuit
Product Detail
Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.
Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.
Resources
Tools & Simulations 3
S-Parameter 1
S-Parameter
Sys-Parameter
ADIsimRF
