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Overview
Features and Benefits
- Low noise figure: 1.4 dB typical
- Single positive supply (self biased)
- High gain: ≤15.5 dB typical
- High OIP3: ≤33 dBm typical
- RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
- Download the HMC8412TCPZ-EP data sheet (pdf)
- Military temperature range (−55°C to +125°C)
- Controlled manufacturing baseline
- 1 assembly/test site
- 1 fabrication site
- Product change notification
- Qualification data available on request
- V62/21602 DSCC Drawing Number
Product Details
The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.
The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.
The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications.
The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.
APPLICATIONS
- Test instrumentation
- Telecommunications
- Military radar and communication Electronic warfare
- Aerospace
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Product Lifecycle
Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
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