HMC8410-DIE

PRODUCTION

0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

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Overview

  • Low noise figure: 1.1 dB typical
  • High gain: 19.5 dB typical
  • High output third order intercept (IP3): 33 dBm typical
  • Die size: 0.945 mm × 0.61 × 0.102 mm 

The HMC8410CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband amplifier that operates over a 0.01 GHz to 10 GHz frequency range. The HMC8410CHIPS provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.

The HMC8410CHIPS also features inputs/outputs internally matched to 50 Ω, making the device ideal for surface mounted technology (SMT)-based, high capacity microwave radio applications.

Applications

  • Software defined radios
  • Electronic warfare
  • Radar applications 

HMC8410-DIE
0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier
HMC8410CHIPS Functional Block Diagram HMC8410CHIPS Pin Configuration
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Tools & Simulations

S-Parameter 1

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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