HMC637A-Die
Info: : PRODUCTION
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HMC637A-Die

GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz

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Info: : PRODUCTION tooltip
Info: : PRODUCTION tooltip
Part Details
Part Models 1
1ku List Price
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Features
  • P1dB Output Power: +30.5 dBm
  • Gain: 14 dB
  • Output IP3: +41 dBm
  • Bias Supplies: +12V, +6V, -1V
  • 50 Ohm Matched Input/Output
  • Die Size: 2.98 x 2.48 x 0.1 mm
Additional Details
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The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637A ideal for EW, ECM, Radar and test equipment applications.

The HMC637A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

  • Telecom Infrastructure
  • Microwave Radio & VSAT
  • Military & Space
  • Test Instrumentation
  • Fiber Optics
Part Models 1
1ku List Price
price unavailable

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Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC637A
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Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

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