HMC637A-Die

PRODUCTION

GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz

Data Sheet Product Selection Table
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Overview

  • P1dB Output Power: +30.5 dBm
  • Gain: 14 dB
  • Output IP3: +41 dBm
  • Bias Supplies: +12V, +6V, -1V
  • 50 Ohm Matched Input/Output
  • Die Size: 2.98 x 2.48 x 0.1 mm

The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637A ideal for EW, ECM, Radar and test equipment applications.

The HMC637A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

  • Telecom Infrastructure
  • Microwave Radio & VSAT
  • Military & Space
  • Test Instrumentation
  • Fiber Optics
HMC637A-Die
GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz
HMC637 - COPY_fbl
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Documentation

Data Sheet 1

Application Note 5

Obsolete Data Sheet 1

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

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