HMC609-Die

PRODUCTION

Low Noise Amplifier Chip, 2 - 4 GHz

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Overview

  • Gain Flatness: 0.2 dB
  • Output IP3: +36 dBm
  • Gain: 20.5 dB
  • Output P1dB: +22 dBm
  • 50 Ohm Matched Input/Output
  • Die Size: 2.11 x 1.32 x 0.10 mm

The HMC609 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 2 to 4 GHz. The HMC609 features extremely flat performance characteristics including 20dB of small signal gain, 3dB of noise figure and output IP3 of +36 dBm across the operating band. The versatile LNA is ideal for hybrid and MCM assemblies due to its compact size, consistent output power and DC blocked RF I/O's. All data is measured with the chip in a 50 Ohm test fixture connected via one 0.025 mm (1 mil) diameter bondwire of minimal length 0.31 mm (12 mil).


Applications

  • Fixed Microwave
  • Point-to-Multi-Point Radios 
  • Test & Measurement Equipment
  • Radar & Sensors
  • Military & Space

HMC609-Die
Low Noise Amplifier Chip, 2 - 4 GHz
HMC609_fbl
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Documentation

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

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