HMC606-Die

PRODUCTION

GaAs InGaP HBT MMIC Ultra Low Phase Noise, Distributed Amplifier, 2 - 18 GHz

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Overview

  • Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz
  • P1dB Output Power: +15 dBm
  • Gain: 14 dB
  • Output IP3: +27 dBm
  • Supply Voltage: +5V @ 64 mA
  • 50 Ω Matched Input/Output
  • Die Size: 2.80 x 1.73 x 0.1 mm

The HMC606 is a GaAs InGaP HBT MMIC Distributed Amplifier die which operates between 2 and 18 GHz. With an input signal of 12 GHz, the amplifier provides ultra low phase noise performance of -160 dBc/Hz at 10 kHz offset, representing a significant improvement over FET-based distributed amplifiers. The HMC606 provides 14 dB of small signal gain, +27 dBm output IP3 and +15 dBm of output power at 1 dB gain compression while requiring 64 mA from a +5V supply. The HMC606 amplifier I/Os are internally matched to 50 Ω facilitating easy integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1mil) diameter wire bonds of minimal length 0.31 mm (12 mils).

Applications

  • Radar, EW & ECM
  • Microwave Radio
  • Test Instrumentation
  • Military & Space
  • Fiber Optic Systems

HMC606-Die
GaAs InGaP HBT MMIC Ultra Low Phase Noise, Distributed Amplifier, 2 - 18 GHz
HMC606_fbl
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Documentation

Data Sheet

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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