HMC459-DIE

RECOMMENDED FOR NEW DESIGNS

Wideband Power Amplifier Chip, DC - 18 GHz

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Overview

  • P1dB Output Power: +25 dBm
  • Gain: 17 dB
  • Output IP3: +31.5 dBm
  • Supply Voltage: +8.0V @ 290 mA
  • 50 Ohm Matched Input/Output
  • Die Size: 3.12 x 1.63 x 0.1 mm

The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good making the HMC459 ideal for EW, ECM and radar driver amplifier applications. The HMC459 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).

Applications

  • Telecom Infrastructure 
  • Microwave Radio & VSAT 
  • Military & Space 
  • Test Instrumentation

HMC459-DIE
Wideband Power Amplifier Chip, DC - 18 GHz
hmc459_fbl
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Documentation

Data Sheet

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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