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HMC1114PM5E
>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier
Overview
Features and Benefits
- High small signal gain: 34.5 dB typical
- High output power: 42 dBm typical at PIN = 18 dBm
- High PAE: 55% typical at PIN = 18 dBm
- Frequency range: 2.7 GHz to 3.8 GHz
- Supply voltage: VDD = 28 V at a quiescent current of 150 mA
- 5 mm × 5 mm, 32-lead LFCSP_CAV package
Product Details
TThe HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is <1 dB typical at small signal levels.
The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.
Applications
- Extended battery operation for public mobile radios
- Power amplifier stage for wireless infrastructure
- Test and measurement equipment
- Commercial and military radars
- General-purpose transmitter amplification
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Markets and Technologies
Product Lifecycle
Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Evaluation Kits (1)
Documentation
Tools & Simulations
Sys-Parameters
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
S-Parameters
Design Tools
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Reference Materials
Product Selection Guide (1)
Design Resources
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PCN-PDN Information
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HMC1114PM5E Discussions
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