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Features
- High saturated output power (PSAT): 41.5 dBm typical
- High small signal gain: 35 dB typical
- High power gain for saturated output power: 25.5 dB typical
- Bandwidth: 2.7 GHz to 3.8 GHz
- High power added efficiency (PAE): 54% typical
- High output IP3: 44 dBm typical
- Supply voltage: VDD = 28 V at 150 mA
- 32-lead, 5 mm × 5 mm LFCSP_CAV package
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The HMC1114LP5DE is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114LP5DE provides ±0.5 dB gain flatness.
The HMC1114LP5DE is ideal for pulsed or continuous wave (CW) applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification.
The HMC1114LP5DE is housed in a compact LFCSP_CAV package.
Applications
- Extended battery operation for public mobile radios
- Power amplifier stage for wireless infrastructure
- Test and measurement equipment
- Commercial and military radars
- General-purpose transmitter amplification
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HMC1114LP5DE
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ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC1114LP5DE |
32-Lead LFCSP_CAV (5mm x 5mm w/ EP)
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| HMC1114LP5DETR |
32-Lead LFCSP_CAV (5mm x 5mm w/ EP)
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- HMC1114LP5DE
- Pin/Package Drawing
-
32-Lead LFCSP_CAV (5mm x 5mm w/ EP)
- Documentation
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HTML
Material Declaration
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HTML
Reliablity Data
- CAD Symbols, Footprints, and 3D Models
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Ultra Librarian
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SamacSys
- HMC1114LP5DETR
- Pin/Package Drawing
-
32-Lead LFCSP_CAV (5mm x 5mm w/ EP)
- Documentation
-
HTML
Material Declaration
-
HTML
Reliablity Data
- CAD Symbols, Footprints, and 3D Models
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Ultra Librarian
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SamacSys
Filter by Model
Part Models
Product Lifecycle
PCN
Oct 30, 2018
- 18_0034
Discontinuance of Model Numbers: HMC1132LP5DE, HMC943ALP5DE, HMC1114LP5DE, HMC8500LP5DE and HMC1099LP5DE
HMC1114LP5DE
Obsolete
HMC1114LP5DETR
Obsolete
Filter by Model
Part Models
Product Lifecycle
PCN
Oct 30, 2018
- 18_0034
Discontinuance of Model Numbers: HMC1132LP5DE, HMC943ALP5DE, HMC1114LP5DE, HMC8500LP5DE and HMC1099LP5DE
Software & Part Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
|
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>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier |
Evaluation Kits 2
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EVAL-HMC1114
HMC1114 Evaluation Board
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Product Detail
This page contains ordering information for evaluating the HMC1114.
Resources
ADPULSERPLUSEBZ
Pulser Plus Reference Design for GaN PA Biasing and Sequencing
Features and Benefits
- Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
- Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
- Operation in Drain Pulsed Mode or Gate Pulsed Mode
- Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
- Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
- Drain Current Monitoring Circuit
Product Detail
Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.
Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.
Resources
Tools & Simulations 3
ADIsimRF
Sys-Parameter
S-Parameter 1
S-Parameter
