HMC-AUH312-DIE
Info : RECOMMENDED FOR NEW DESIGNS
searchIcon
cartIcon

HMC-AUH312-DIE

Wideband Amplifier Chip, 0.5 - 80 GHz

Show More showmore-icon

Info : RECOMMENDED FOR NEW DESIGNS tooltip
Info : RECOMMENDED FOR NEW DESIGNS tooltip
Part Details
Part Models 2
1ku List Price
price unavailable
Features
  • Small signal gain: >8 dB
  • 80 GHz distributed amplifier
  • Configurable with or without bias tees for VDD and VGG1 bias
  • Low power dissipation
    • 300 mW with bias tee at VDD = 5 V
    • 360 mW without bias tee at VDD = 6 V
    • 480 mW without bias tee at VDD = 8 V
  • Die size: 1.2 mm × 1.0 mm × 0.1 mm
Additional Details
show more Icon

The HMC-AUH312 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), HEMT, low noise, wideband amplifier die that operates between 500 MHz and 80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5 V p-p, which makes it ideal for use in broadband wireless, fiber optic communications, and test equipment applications.

The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy integration into a multichip module (MCM). The HMC-AUH312 can be used with or without a bias tee, and requires off-chip blocking components and bypass capacitors for the dc supply lines. Adjustable gate voltages allow for gain adjustment.

Applications

  • Fiber optic modulator drivers
  • Fiber optic photoreceiver postamplifiers
  • Low noise amplifier for test and measurement equipment
  • Point to point and point to multipoint radios
  • Wideband communication and surveillance systems
  • Radar warning receivers
Part Models 2
1ku List Price
price unavailable

close icon
Documentation

Documentation

Part Model Pin/Package Drawing Documentation CAD Symbols, Footprints, and 3D Models
HMC-AUH312
  • HTML
  • HTML
HMC-AUH312-SX
  • HTML
  • HTML
Software & Part Ecosystem

Software & Part Ecosystem

Tools & Simulations

Tools & Simulations 3

Recently Viewed