Features and Benefits
- Small signal gain: >8 dB
- 80 GHz distributed amplifier
- Configurable with or without bias tees for VDD and VGG1 bias
- Low power dissipation
- 300 mW with bias tee at VDD = 5 V
- 360 mW without bias tee at VDD = 6 V
- 480 mW without bias tee at VDD = 8 V
- Die size: 1.2 mm × 1.0 mm × 0.1 mm
The HMC-AUH312 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), HEMT, low noise, wideband amplifier die that operates between 500 MHz and 80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5 V p-p, which makes it ideal for use in broadband wireless, fiber optic communications, and test equipment applications.
The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy integration into a multichip module (MCM). The HMC-AUH312 can be used with or without a bias tee, and requires off-chip blocking components and bypass capacitors for the dc supply lines. Adjustable gate voltages allow for gain adjustment.
- Fiber optic modulator drivers
- Fiber optic photoreceiver postamplifiers
- Low noise amplifier for test and measurement equipment
- Point to point and point to multipoint radios
- Wideband communication and surveillance systems
- Radar warning receivers
Product Lifecycle Recommended for New Designs
This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.
Documentation & Resources
Tools & Simulations
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
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