Features and Benefits

  • Small signal gain: >8 dB
  • 80 GHz distributed amplifier
  • Configurable with or without bias tees for VDD and VGG1 bias
  • Low power dissipation
    • 300 mW with bias tee at VDD = 5 V
    • 360 mW without bias tee at VDD = 6 V
    • 480 mW without bias tee at VDD = 8 V
  • Die size: 1.2 mm × 1.0 mm × 0.1 mm

Product Details

The HMC-AUH312 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), HEMT, low noise, wideband amplifier die that operates between 500 MHz and 80 GHz, providing a typical 3 dB bandwidth of 80 GHz. The amplifier provides 10 dB of small signal gain and a maximum output amplitude of 2.5 V p-p, which makes it ideal for use in broadband wireless, fiber optic communications, and test equipment applications.

The amplifier die occupies 1.2 mm × 1.0 mm, facilitating easy integration into a multichip module (MCM). The HMC-AUH312 can be used with or without a bias tee, and requires off-chip blocking components and bypass capacitors for the dc supply lines. Adjustable gate voltages allow for gain adjustment.


  • Fiber optic modulator drivers
  • Fiber optic photoreceiver postamplifiers
  • Low noise amplifier for test and measurement equipment
  • Point to point and point to multipoint radios
  • Wideband communication and surveillance systems
  • Radar warning receivers

Product Lifecycle icon-recommended Recommended for New Designs

This product has been released to the market. The data sheet contains all final specifications and operating conditions. For new designs, ADI recommends utilization of these products.

Tools & Simulations


Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.


Design Tools


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Design Resources

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