HMC-AUH232-DIE

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Modulator Driver Amplifier Chip, DC - 43 GHz

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Overview

  • Small Signal Gain: 12 dB
  • Output Voltage: up to 8V pk-pk
  • Single-Ended I/Os
  • High Speed Performance: 46 GHz 3 dB Bandwidth
  • Low Power Dissipation: 0.9 W
  • Small Die Size: 2.1 x 1.70 x 0.1 mm

The HMC-AUH232 is a GaAs MMIC HEMT Distributed Driver Amplifier die which operates between DC and 43 GHz and provides a typical 3 dB bandwidth of 46 GHz. The amplifier provides 12 dB of small signal gain while requiring only 180 mA from a +5V supply voltage. The HMC-AUH232 exhibits very good gain and phase ripple to 40 GHz, and can output up to 8V peak-to-peak with low jitter, making it ideal for for use in broadband wireless, fiber optic communication and test equipment applications.

The amplifier die occupies less than 3.6 mm² which facilitates easy integration into Multi-Chip-Modules (MCMs). The HMC-AUH232 requires external bias-tee as well as off-chip blocking components and bypass capacitors for the DC supply lines. A gate voltage adjust, Vgg2 is provided for limited gain adjustment, while Vgg1 adjusts the bias current for the device.

Applications

  • 40 Gb/s Lithium Niobate/Mach Zender Fiber Optic Modulators
  • Broadband Gain Block for Test & Measurement Equipment
  • Broadband Gain Block for RF Applications
  • Military & Space

HMC-AUH232-DIE
Modulator Driver Amplifier Chip, DC - 43 GHz
hmc-auh232_fbl
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Documentation

Data Sheet

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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