Part Details
Part Models 3
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Features
  • Gain: 13 dB
  • P1dB: +20 dBm
  • Supply Voltage: +4V
  • 50 Ohm Matched Input/Output
  • Die Size: 2.47 x 1.60 x 0.05 mm
Additional Details
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The HMC-APH633 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 71 and 76 GHz. The HMC-APH633 provides 13 dB of gain, and an output power of +20 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.

The HMC-APH633 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.

Applications

  • Short Haul / High Capacity Links
  • Wireless LAN Bridges
  • Military & Space
  • E-Band Communication Systems
Part Models 3
1ku List Price
price unavailable

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Documentation

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HMC-APH633
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HMC-APH633-SX
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Product Lifecycle

PCN

Jul 19, 2019

- 19_0036

Obsolescence of product models.

HMC-APH633

Obsolete

HMC-APH633-SX

Obsolete

HMC-APH633-WP

Obsolete

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Part Models

Product Lifecycle

PCN

Jul 19, 2019

- 19_0036

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Obsolescence of product models.

HMC-APH633

Obsolete

HMC-APH633-SX

Obsolete

HMC-APH633-WP

Obsolete

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