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HMC-ALH444-DIE

RECOMMENDED FOR NEW DESIGNS

Low Noise Amplifier Chip, 1 - 12 GHz

Data Sheet Product Selection Table
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Overview

  • Noise Figure: 1.75 dB @ 10 GHz
  • Gain: 17 dB
  • P1dB Output Power: +19 dBm @ 5 GHz
  • Supply Voltage: +5V @ 55 mA
  • Die Size: 2.64 x 1.64 x 0.1 mm

The HMC-ALH444 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 1 and 12 GHz. The amplifier provides 17 dB of gain, 1.5 dB noise figure and +19 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +5V supply voltage.

Applications

  • Wideband Communication Systems
  • Surveillance Systems
  • Point-to-Point Radios
  • Point-to-Multi-Point Radios
  • Military & Space
  • Test Instrumentation
  • VSAT
HMC-ALH444-DIE
Low Noise Amplifier Chip, 1 - 12 GHz
hmc-alh444_fbl
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Documentation

Data Sheet 1

Application Note 5

Technical Articles 1

Data Sheet

This is the most up-to-date revision of the Data Sheet.

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Software Resources

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Tools & Simulations

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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