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Features
- Noise Figure: 3.5 dB
- P1dB: +12 dBm
- Gain: 22 dB
- Supply Voltage: +2.5V
- 50 Ohm Matched Input/Output
- Die Size: 1.80 x 0.73 x 0.1 mm
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The HMC-ALH310 is a three stage GaAs HEMT MMIC Low Noise Amplifier (LNA) which operates between 37 and 42 GHz. The HMC-ALH310 features 22 dB of small signal gain, 3.5 dB of noise figure and an output power of +12 dBm at 1 dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
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HMC-ALH310-DIE
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| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC-ALH310 | CHIPS OR DIE |
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| HMC-ALH310-SX | CHIPS OR DIE |
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- HMC-ALH310
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- CHIPS OR DIE
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Product Lifecycle
PCN
Jul 19, 2019
- 19_0036
Obsolescence of product models.
HMC-ALH310
Obsolete
HMC-ALH310-SX
Obsolete
Filter by Model
Part Models
Product Lifecycle
PCN
Jul 19, 2019
- 19_0036
Obsolescence of product models.
Software & Part Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
|
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20 GHz to 44 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier |
Tools & Simulations 3
ADIsimRF
S-Parameter 1
S-Parameter
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